VO2 microcrystals as an advanced smart window material at semiconductor to metal transition
نویسندگان
چکیده
منابع مشابه
VO2 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process
We describe a relatively simple, reliable, and reproducible preparation technique, the precursor oxidation process, for making VO2 films with strong semiconductor-to-metal phase transition. Sputter-deposited metal precursor V films were oxidized in situ in the deposition chamber for 2.5–7 h at 370–415 °C in 0.2 Torr O2 to form 22–220 nm VO2. The strength resistivity ratio, RR= S / M and sharpne...
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-The effects of doping and uniaxial stress on the structural and magnetic properties of V02 are reviewed. Important electron-electron correlation effects are deduced : (i) in the metallic phase from the results obtained in V I ~ N ~ ~ O ~ alloys, (ii) in the insulating phases of pure V02 at ambiant pressure (MI), under uniaxial stress or in the presence of Cr impurities (T and M2). Discovered i...
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ژورنال
عنوان ژورنال: Journal of Physics D: Applied Physics
سال: 2017
ISSN: 0022-3727,1361-6463
DOI: 10.1088/1361-6463/aa8e87